Identification of the 0.95 eV luminescence band in n-type GaAs:Si
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=2/a=033/pdf
Reference22 articles.
1. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
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5. Structure of the As Vacancies on GaAs(110) Surfaces
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