Structure of the As Vacancies on GaAs(110) Surfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.119/fulltext
Reference21 articles.
1. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
2. Energetics of the As vacancy in GaAs: The stability of the 3+ charge state
3. Geometry and electronic structure of the arsenic vacancy on GaAs(110)
4. Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces
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