Can one-dimensional electron gas be generated in vicinal steps of GaAs?
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=39/a=004/pdf
Reference10 articles.
1. Time-resolved interband transitions in periodic multilayer δ-doped systems
2. Collective and single-particle excitations in Raman scattering of multilayerδ-doped systems
3. Band gap renormalization in resonant Raman spectra of multilayer systems
4. Self-consistent energy levels in low-dimensionally delta -doped structures
5. Si incorporation during molecular beam epitaxy growth of GaAs and preferential attachment of Si atoms at misorientation steps
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates;Semiconductors;2016-02
2. Pseudomorphic HEMT with Sn nanowires on a vicinal GaAs substrate;Semiconductor Science and Technology;2015-06-30
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