Pseudomorphic HEMT with Sn nanowires on a vicinal GaAs substrate-Reference-Cited by-同舟云学术

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Pseudomorphic HEMT with Sn nanowires on a vicinal GaAs substrate

Published:2015-06-30 Issue:8 Volume:30 Page:085009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Khabibullin R A,Yachmenev A E,Lavrukhin D V,Ponomarev D S,Bugayev A S,Maltsev P P

Funder

Russian Scientific Foundation:

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=8/a=085009/pdf

Reference21 articles.

1. Ballistic InAs Nanowire Transistors

2. Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor

3. The potential of split-gate transistors as one-dimensional electron waveguides revealed through the testing and analysis of yield and reproducibility

4. Statistical theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction

5. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

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1. Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review;Journal of Physics D: Applied Physics;2022-01-26

2. Sub-terahertz FET detector with self-assembled Sn-nanothreads;Journal of Physics D: Applied Physics;2019-12-05

3. Sn-nanothreads in GaAs matrix and their sub- and terahertz applications;Journal of Physics: Conference Series;2018-09

4. Numerical simulations and experimental study of terahertz photoconductive antennas based on GaAs and its ternary compounds;Optical Sensing and Detection V;2018-05-09

5. Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs;Journal of Physics D: Applied Physics;2018-03-07

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