Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/15/i=43/a=004/pdf
Reference73 articles.
1. Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films
2. An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity'
3. Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane
4. Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity
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1. Study of Infra-red Spectroscopy on Bonding Environment and Structural Properties of Nanocrystalline Silicon Thin Films Grown by VHF-PECVD Process;Silicon;2018-11-16
2. High pressure processing of hydrogenated amorphous silicon solar cells: Relation between nanostructure and high open-circuit voltage;Applied Physics Letters;2015-01-26
3. Preferential 〈220〉 crystalline growth in nanocrystalline silicon films from 27.12 MHz SiH4 plasma for applications in solar cells;RSC Advances;2015
4. Low temperature plasma production of hydrogenated nanocrystalline silicon thin films;Current Applied Physics;2013-01
5. Real-time transmission Mueller polarimetry on hydrogenated polymorphous silicon under current injection;Journal of Physics D: Applied Physics;2012-12-17
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