Contactless electro-reflectance study of interdiffusion in heat-treated single quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
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3. Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density
4. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
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1. Accurate and direct determination of interdiffusion parameters, a genetic algorithm approach;Semiconductor Science and Technology;2005-02-18
2. Interdiffusion and the strain effect in pseudomorphic quantum well heterostructures;Solid State Communications;2004-12
3. Recent developments in spectroscopy of quantum structures;Materials Science in Semiconductor Processing;2001-12
4. Growth characterisation of InxGa1−xAs/GaAs/AlAs vertical-cavity surface-emitting laser structure using photomodulated reflectance;IEE Proceedings - Optoelectronics;2001-02-01
5. Resonances between the cavity mode and five excitonic transitions in an InxGa1−xAs/GaAs/AlAs/AlGaAs vertical-cavity surface-emitting laser structure using photomodulated reflectance;Journal of Applied Physics;2000-11-15
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