Annealing of radiation induced oxygen deficient point defects in amorphous silicon dioxide: evidence for a distribution of the reaction activation energies-Reference-Cited by-同舟云学术

Annealing of radiation induced oxygen deficient point defects in amorphous silicon dioxide: evidence for a distribution of the reaction activation energies

Published:2008-08-27 Issue:38 Volume:20 Page:385215
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Nuccio L,Agnello S,Boscaino R

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/20/i=38/a=385215/pdf

Reference36 articles.

1. Thermal Bleaching of γ-Ray-Induced Defect Centers in High Purity Fused Silica by Diffusion of Radiolytic Molecular Water

2. Defects in SiO2 and Related Dielectrics: Science and Technology

3. H2OandO2molecules in amorphousSiO2:Defect formation and annihilation mechanisms

4. Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica

5. Role of radiolytic oxygen in the x-ray production and thermal annealing of defects in high-purity amorphousSiO2

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