Ge nanostructures grown by self-assembly; influence of substrate orientation
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=35/a=304/pdf
Reference73 articles.
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1. Modified Stranski–Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition;Nanotechnology;2012-01-17
2. In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beam;Crystal Growth & Design;2011-06-13
3. Order and disorder in the heteroepitaxy of semiconductor nanostructures;Materials Science and Engineering: R: Reports;2010-11
4. Effect of elastic anisotropy on surface pattern evolution of epitaxial thin films;International Journal of Solids and Structures;2009-07
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