Percolation network of PdGe phase formed on Ge surface by high-current Pd-ion implantation-Reference-Cited by-同舟云学术

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Percolation network of PdGe phase formed on Ge surface by high-current Pd-ion implantation

Published:1999-01-01 Issue:1 Volume:11 Page:39-45
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Gao K Y,Liu B X

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference16 articles.

1. VA-8 germanium MISFETs exhibiting low interface state density using Ge3N4gate insulator

2. Germanide formation by thermal treatment of platinum films deposited on single-crystal Ge〈100〉 substrates

3. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report

4. C54‐TiSi2formed by direct high current Ti‐ion implantation

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1. Percolation of binary mixtures adsorbed on square lattices;Physica A: Statistical Mechanics and its Applications;2015-04

2. Percolation of interacting particles on heterogeneous surfaces;Physica A: Statistical Mechanics and its Applications;2010-04

3. Percolation on patchwise heterogeneous surfaces under equilibrium conditions;Physica A: Statistical Mechanics and its Applications;2008-11

4. Thermal percolation for interacting monomers adsorbed on square lattices;Journal of Physics A: Mathematical and General;2005-03-31

5. Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation;Thin Solid Films;2001-03

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