The state filling effect in p-doped InGaAs/GaAs quantum dots
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/19/i=38/a=386213/pdf
Reference28 articles.
1. Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed
2. Ultrafast electron capture into p-modulation-doped quantum dots
3. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
4. Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
5. State filling in InAs quantum-dot laser structures
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