Hydrogen motion and stretched-exponential relaxation in a-Si:H
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon
2. Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
3. Dispersive processes in the annealing of light- and thermally-induced dangling bonds in a-Si:H
4. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO2 ReRAM Devices;Advanced Electronic Materials;2023-07-25
2. Observation of a band of fast responding metastable deep traps for charge carriers in crystalline Si(n)/SiNx:H/amorphous Si:H/Al structures;Journal of Non-Crystalline Solids;2000-11
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