Self-consistent Green's function method for dilute nitride conduction band structure
Author:
Funder
Science Foundation Ireland
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/26/i=36/a=365502/pdf
Reference33 articles.
1. Dilute III-V Nitride Semiconductors and Material Systems
2. Band Anticrossing in GaInNAs Alloys
3. Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys
4. Influence of conduction-band nonparabolicity on electron confinement and effective mass inGaNxAs1−x∕GaAsquantum wells
5. Breakup of the conduction band structure of diluteGaAs1−yNyalloys
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1. Band dispersion, scattering rate, and carrier mobility using the poles of Green’s function for dilute nitride alloys;Journal of Applied Physics;2024-01-28
2. Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys;Physical Review Applied;2022-01-24
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4. Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors;Journal of Nanophotonics;2017-05-03
5. Effect of boron localized states on the conduction band transport in BxGa1−xP;Applied Physics Letters;2014-12
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