Effect of boron localized states on the conduction band transport in BxGa1−xP
Author:
Affiliation:
1. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen, Germany
2. Department of Physics and Material Sciences Center, Phillips-Universität Marburg, Marburg, Germany
Funder
GRK Functionalization of semiconductors
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903244
Reference28 articles.
1. Integrating silicon photonics
2. Progress and challenges for next-generation high-efficiency multijunction solar cells
3. Gallium arsenide and other compound semiconductors on silicon
4. III N V semiconductors for solar photovoltaic applications
5. Band structure properties of novel BxGa1−xP alloys for silicon integration
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1. Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon;Journal of Applied Physics;2022-04-07
2. Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications;Future Directions in Silicon Photonics;2019
3. Structural and electronic properties of isovalent boron atoms in GaAs;Journal of Applied Physics;2018-04-28
4. Interplay of boron localized states and electron transport in BxGa1-xAs0.11P0.89:Te;Semiconductor Science and Technology;2016-06-20
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