Formation of Si/Ge nanostructures at surfaces by self-organization
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=17/a=006/pdf
Reference20 articles.
1. Positioning single atoms with a scanning tunnelling microscope
2. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
3. Nucleation behavior in molecular beam and chemical vapor deposition of silicon on Si(111)‐(7×7)
4. Atomic processes in crystal growth
5. Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy
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