Thermal Instability of Gold Thin Films

Author:

Łapiński Marcin1ORCID,Dróżdż Piotr2ORCID,Gołębiowski Mariusz2,Okoczuk Piotr1ORCID,Karczewski Jakub1,Sobanska Marta3ORCID,Pietruczik Aleksiej3,Zytkiewicz Zbigniew R.3ORCID,Zdyb Ryszard2,Sadowski Wojciech1,Kościelska Barbara1ORCID

Affiliation:

1. Institute of Nanotechnology and Materials Engineering, Advanced Materials Center, Gdansk University of Technology, 80-233 Gdańsk, Poland

2. Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland

3. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Abstract

The disintegration of a continuous metallic thin film leads to the formation of isolated islands, which can be used for the preparation of plasmonic structures. The transformation mechanism is driven by a thermally accelerated diffusion that leads to the minimalization of surface free energy in the system. In this paper, we report the results of our study on the disintegration of gold thin film and the formation of nanoislands on silicon substrates, both pure and with native silicon dioxide film. To study the processes leading to the formation of gold nanostructures and to investigate the effect of the oxide layer on silicon diffusion, metallic film with a thickness of 3 nm was deposited by molecular beam epitaxy (MBE) technique on both pure and oxidized silicon substrates. Transformation of the thin film was observed by low-energy electron microscopy (LEEM) and a scanning electron microscope (SEM), while the nanostructures formed were observed by atomic force microscope (AFM) method. Structural investigations were performed by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) methods. Our experiments confirmed a strong correlation between the formation of nanoislands and the presence of native oxide on silicon substrates.

Funder

NCN

Gdańsk University of Technology

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

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