Concentration-dependent photoluminescence of Te-doped In0.14Ga0.86As0.13Sb0.87
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=48/a=013/pdf
Reference14 articles.
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3. Growth and photoluminescence of GaSb andGa1−xInxAsySb1−ygrown on GaSb substrates by liquid-phase electroepitaxy
4. Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy
5. Electroreflectance and photoluminescence studies of InP epitaxial layers highly doped with selenium
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1. Spectroscopic investigation of new manganese tellurite glasses synthesized by sol-gel method;Journal of Alloys and Compounds;2019-09
2. Characterization of LPE-Ga0.86In0.14As0.13Sb0.87;MRS Advances;2017-09-05
3. Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response;Materials Science in Semiconductor Processing;2015-03
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