Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy-Reference-Cited by-同舟云学术

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Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy

Published:2000-03-15 Issue:13 Volume:12 Page:2895-2902
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Puech P,Toufella M,Carles R,Sirvin R,Bedel E,Fontaine C,Stellmacher M,Bisaro R,Nagle J,Claverie A,Benassayag G

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference17 articles.

1. A photoconductive, miniature terahertz source

2. Low Temperature-GaAs Current-Blocking InGaAs-AlGaAs Strained Quantum Well Lasers on P-type GaAs Substrate with Output Power over 100 mW

3. Diameter of As clusters in LT-GaAs by Raman spectroscopy

4. Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy

5. Raman study of low growth temperature GaAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells;Semiconductor Science and Technology;2006-04-19

2. The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers;Journal of Crystal Growth;2003-04

3. High-quality GaMnAs films grown with arsenic dimers;Journal of Crystal Growth;2003-01

4. Interlayer Exchange Coupling in Short Period GaMnAs/GaAs Superlattices;Acta Physica Polonica A;2001-09

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