Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors-Reference-Cited by-同舟云学术

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Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

Published:2005-05-20 Issue:22 Volume:17 Page:S2197-S2210
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Eneman G,Simoen E,Delhougne R,Gaubas E,Simons V,Roussel P,Verheyen P,Lauwers A,Loo R,Vandervorst W,Meyer K De,Claeys C

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/17/i=22/a=007/pdf

Reference30 articles.

1. Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

2. Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

3. Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates

4. Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures

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1. Low frequency noise characterization in n-channel FinFETs;Solid-State Electronics;2012-04

2. Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers;Thin Solid Films;2011-06

3. Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?;physica status solidi (c);2009-08

4. Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices;ECS Transactions;2008-10-03

5. Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers;Materials Science in Semiconductor Processing;2008-10

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