Initial surface reactions in atomic layer deposition of Al2O3on the hydroxylated GaAs(001)-4 × 2 surface
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=48/a=005/pdf
Reference32 articles.
1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
2. Status of the GaAs metal—oxide—semiconductor technology
3. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
4. Fabrication of a depletion mode GaAs MOSFET using Al2O3 as a gate insulator through the selective wet oxidation of AlAs
5. Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process
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