Origin of the ‘S-shaped’ temperature dependence of luminescent peaks from semiconductors
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=30/a=011/pdf
Reference21 articles.
1. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
2. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
3. Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
4. Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1−y grown on GaAs(001) substrates
5. Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a - and c -Plane Sapphire Substrates
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