Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5thin films-Reference-Cited by-同舟云学术

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Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5thin films

Published:2009-10-09 Issue:43 Volume:21 Page:435501
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Kölpin Helmut,Music Denis,Laptyeva Galyna,Ghadimi Reza,Merget Florian,Richter Silvia,Mykhaylonka Ruslàn,Mayer Joachim,Schneider Jochen M

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/21/i=43/a=435501/pdf

Reference40 articles.

1. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

2. Unravelling the interplay of local structure and physical properties in phase-change materials

3. Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase

4. Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition

5. Why Phase-Change Media Are Fast and Stable: A New Approach to an Old Problem

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1. Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping;Acta Materialia;2022-10

2. Phase change memory materials and their applications;Russian Chemical Reviews;2022

3. Overview of the Role of Alloying Modifiers on the Performance of Phase Change Memory Materials;Journal of Electronic Materials;2020-11-09

4. Effect of ion irradiation on the optical properties of Ag-doped Ge2Sb2Te5 (GST) thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-03

5. Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices;Scientific Reports;2019-02-12

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