Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1875742
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1. Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses
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