The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Structures of dislocations in GaAs and their modification by impurities
2. Vacancy Interaction with Dislocations in Silicon: The Shuffle-Glide Competition
3. Stacking faults in group-IV crystals: Anab initiostudy
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1. On Understanding Stacking Fault Formation in Ice;Journal of the American Chemical Society;2010-12-29
2. Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si;physica status solidi (c);2008-07
3. Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy;Physica B: Condensed Matter;2007-12
4. Dislocations in Semiconductors: Core Structure and Mobility;Defect and Diffusion Forum;2001-11
5. The electrical, optical and device effects of dislocations and grain boundaries;Extended Defects in Semiconductors
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