The origin of perpendicular magneto-crystalline anisotropy in L10–FeNi under tetragonal distortion
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/25/i=10/a=106005/pdf
Reference42 articles.
1. Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes
2. Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes
3. Magnetoresistance Effect in Tunnel Junctions with Perpendicularly MagnetizedD022-Mn3-δGa Electrode and MgO Barrier
4. Spin transfer in nanomagnetic devices with perpendicular anisotropy
5. Structure and magnetic properties for L10-ordered FeNi films prepared by alternate monatomic layer deposition
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