Magnetoresistance Effect in Tunnel Junctions with Perpendicularly MagnetizedD022-Mn3-δGa Electrode and MgO Barrier-Reference-Cited by-同舟云学术

Magnetoresistance Effect in Tunnel Junctions with Perpendicularly MagnetizedD022-Mn3-δGa Electrode and MgO Barrier

Published:2011-03-14 Issue:4 Volume:4 Page:043002
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Kubota Takahide,Miura Yoshio,Watanabe Daisuke,Mizukami Shigemi,Wu Feng,Naganuma Hiroshi,Zhang Xianmin,Oogane Mikihiko,Shirai Masafumi,Ando Yasuo,Miyazaki Terunobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=4/a=043002/pdf

Reference15 articles.

1. Current-driven excitation of magnetic multilayers

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4. Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions

5. Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers

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