Effects of bulk-defects and metal/bulk interface anomalies in a forming-free double-barrier memristor
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aad96b/pdf
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1. Realization of synaptic learning and memory functions in Y2O3based memristive device fabricated by dual ion beam sputtering
2. ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
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