Abstract
Abstract
Silicon oxynitride (SiO
x
N
y
) thin films were synthesized via reactive direct current magnetron sputtering under different reactive gas mass flow ratios (O2:N2) and discharge powers. The process was monitored by optical emission spectroscopy (OES), while spectroscopic ellipsometry was used to characterize the optical properties of the thin films and deposition rates. In this work, the plasma generated under different deposition parameters is analyzed by monitoring the emission lines of different species (Si I, Ar I, O2, and N2) and these results are then correlated with the corresponding target poisoning process and the optical properties of the grown thin films. According to the spectral analysis, the emission lines proved to be sensitive to the synthesis process as it was possible to differentiate deposition variations when other parameters remained unchanged. Furthermore, similar plasma conditions determined via the emission of different species were found to produce consistent thin film optical properties and vice versa. OES showed to be an effective method of monitoring and controlling the deposition of SiO
x
N
y
thin films with specific compositions.
Funder
Consejo Nacional de Humanidades Ciencias y Tecnologías
Universidad Nacional Autónoma de México, PAPIIT-UNAM
CONAHCYT, Centro de Investigación Científica y de Educación Superior de Ensenada
Cited by
2 articles.
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