Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing-Reference-Cited by-同舟云学术

Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

Published:2017-04-13 Issue:19 Volume:50 Page:194001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Shinoda K,Miyoshi N,Kobayashi H,Miura M,Kurihara M,Maeda K,Negishi N,Sonoda Y,Tanaka M,Yasui N,Izawa M,Ishii Y,Okuma K,Saldana T,Manos J,Ishikawa K,Hori M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=19/a=194001/pdf

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5. XeF2gas-assisted focused-electron-beam-induced etching of GaAs with 30 nm resolution

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