Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H–SiC for photoconductive switch applications-Reference-Cited by-同舟云学术

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Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H–SiC for photoconductive switch applications

Published:2017-03-02 Issue:13 Volume:50 Page:135104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Meyers V,Chowdhury A R,Mauch D,Dickens J C,Neuber A A,Joshi R P

Funder

Air Force Office of Scientific Research

Office of Naval Research

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=13/a=135104/pdf

Reference44 articles.

1. Picosecond optoelectronic switching and gating in silicon

2. The Dielectric Wall Accelerator

3. Vacuum insulator development for the dielectric wall accelerator

4. All solid-state high power microwave source with high repetition frequency

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1. Optical testing method analysis of carrier transport in GaAs PCSS;Vacuum;2020-12

2. 550-W Ultraviolet Exciplex Source for Pulsed Power Applications;IEEE Transactions on Plasma Science;2019-01

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