Insights on film growth conditions on a floating substrate during reactive Ar/O2 bipolar high power impulse magnetron sputter deposition

Abstract

Abstract We report several effects found in reactive bipolar high-power impulse magnetron sputtering (abbreviated as bipolar HiPIMS or BPH) discharges at the substrate level. The role of the negative peak current and the positive pulse voltage, U + , on the deposition flux at the electrically insulating substrate is discussed and the results are compared to conventional DC discharges. In particular, the normalized energy flux, ϕ n , delivered to the substrate is found higher under BPH conditions at U + = +300 V ( φ n = 3.43 × 10 15 eV·nm−3) as compared to the HiPIMS ( φ n = 0.78 × 10 15 eV·nm−3) and DCMS ( φ n = 1.23 × 10 15 eV·nm−3) regimes which is assumed to be provoked by an intensification of the positive ion bombardment. Accordingly, the mean energy and the count of positively charged metal and gaseous ions increase in line with U + as measured by energy-resolved mass spectrometry. Contrariwise, our analysis has shown a significant decrease (≈20 %) of negative oxygen ion count under BPH conditions.