Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix-Reference-Cited by-同舟云学术

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Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix

Published:2017-07-03 Issue:29 Volume:50 Page:295102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Segercrantz N,Slotte J,Makkonen I,Tuomisto F,Sandall I C,Ashwin M J,Veal T D

Funder

Suomen Akatemia

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=29/a=295102/pdf

Reference30 articles.

1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

2. Characteristics of Semiconductor Alloy GaAs1-xBix

3. Molecular beam epitaxy of GaN1-x Bi x alloys with high bismuth content

4. GaN1−xBix: Extremely mismatched semiconductor alloys

5. Giant Spin-Orbit Bowing inGaAs1−xBix

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films;ACS Omega;2023-09-18

2. GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing;Frontiers in Electronic Materials;2022-06-16

3. Modified band alignment method to obtain hybrid functional accuracy from standard DFT: Application to defects in highly mismatched III-V:Bi alloys;Physical Review Materials;2021-12-03

4. Raman spectroscopy of GaSb1−xBix alloys with high Bi content;Applied Physics Letters;2020-05-18

5. Terahertz Emission Mechanisms in III–V Semiconductors: The Influence of Isoelectronic Dopants;Emerging Trends in Terahertz Solid-State Physics and Devices;2020

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