Effect of polarization on tunnelling electroresistance in ferroelectric tunnel junctions

Abstract

Abstract High-quality epitaxial BiFeO3 (BFO) films were grown on (001)-, (110)- and (111)-oriented Nb:SrTiO3 (NSTO) substrates by pulsed laser deposition. The type of domain structure can be modulated using BFO ferroelectric films with different crystalline orientations. The ON/OFF ratios obtained in (001)-, (110)- and (111)-oriented Au/BFO/NSTO ferroelectric tunnel junctions (FTJs) are 6 × 103, 3 × 104 and 2 × 105, respectively. Analysis of the I–V curves of tunnelling current and average BFO ferroelectric barrier height proves that the polarization intensity of the BFO films modulates both the ferroelectric barrier and the Schottky barrier profile, which further influences the electronic tunnelling probability in BFO FTJs. This work will be useful for further study on achieving a giant ON/OFF ratio and developing insights into the barrier profile and transport mechanism of metal/ferroelectric/semiconductor-type FTJs.