Abstract
Abstract
Solar-blind deep-ultraviolet photodetectors are one of the most effective tools to detect corona discharge because high-voltage corona discharge is always accompanied by deep-ultraviolet light (UVC, 200–280 nm), referred to as solar-blind signals. In this study, a fully transparent metal-semiconductor-metal solar-blind photodetector with Al-doped ZnO (AZO) transparent electrodes was successfully constructed based on amorphous Ga2O3 film (a-Ga2O3) and prepared by radio frequency magnetron sputtering. The as-fabricated fully transparent device exhibits excellent performance, including an ultra-low dark current of 2.84 pA, a high photo-to-dark current ratio of 1.41 × 107, superb rejection ratio (R254/R400 = 2.93 × 105), a large responsivity of 2.66 A W−1, superb detectivity (4.84 × 1014 Jones), and fast response speed (rise/fall time: 24 μs/1.24 ms). It is worth noting that the fully transparent a-Ga2O3 photodetector demonstrates ultra-high sensitivity to weak solar-blind signals, far below the 100 nW cm−2 threshold of the test equipment. It also has high-resolution detection capabilities for subtle changes in radiation intensity. Acting as a sensor for the high-voltage corona discharge simulation detection system, the fully transparent a-Ga2O3 photodetector can clearly detect extremely weak solar-blind signals. The results described in this work serve as proof-of-concept for future applications of amorphous Ga2O3 solar-blind deep-ultraviolet photodetectors in high-voltage corona discharge detection.
Funder
Science and Technology Research Project of Chongqing
Education Committee
Natural Science Foundation of Chongqing
National Natural Science Foundation of China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
32 articles.
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