Carbon-doped ZnO thin films: A transparent conductive oxide for application in solar-blind photodetectors

Abstract

Transparent conductive oxide (TCO) films are crucial in optoelectronic devices, such as photodetectors, due to their unique blend of transparency and electrical conductivity. ZnO is a top choice for TCOs owing to its excellent properties, non-toxicity, and cost-effectiveness. In this work, we explore the potential of carbon doping to enhance the electrical properties of ZnO films for transparent conductive applications. Our findings reveal that C-doped ZnO (ZnO:C) films retain the pristine high quality and surface morphology despite an increase in defects with higher C doping. Notably, C doping does not compromise the visible light transmittance of ZnO films, while inducing a gradual increase in optical bandgap, indicative of the typical Burstein–Moss effect. As carbon doping increases, the ZnO:C films exhibit improved carrier concentration, lower resistivity, and sustained high mobility, achieving optimal performance with an electron concentration of 3.73 × 1019 cm−3, resistivity of 3.69 × 10−3 Ω cm, and mobility of 46.08 cm2 V−1 s−1. Finally, we utilized ZnO:C films as a transparent electrode material in ε-Ga2O3-based photodetector, achieving the development of transparent device and attaining high-performance solar-blind detection capabilities. This work provides a strategy for developing a transparent conductive oxide, with ZnO:C emerging as a promising rival to IIIA-doped ZnO for optoelectronic applications.