Electronic mechanism for resistance drift in phase-change memory materials: link to persistent photoconductivity
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6463/ab795e/pdf
Reference55 articles.
1. Phase Change Materials and Their Application to Nonvolatile Memories
2. Phase Change Materials: Challenges on the Path to a Universal Storage Device
3. Memory leads the way to better computing
4. Phase Change Materials
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