Relationship between changes in interface characteristics and external voltage under compressing force in metal–graphene–metal stacks

Abstract

Abstract Metal–graphene–metal (M–G–M) stacks have provided new specific methods for the integration of two-dimensional (2D) materials into three-dimensional (3D) electronic devices, such as transistors, supercapacitors, memristors and others. Intentional control of the local electronic properties in the stacks is the primary problem to be solved when developing hybrid structures with 2D and 3D elements. In order to do this, the physical mechanisms and processes that define the properties of the stacks must be thoroughly understood. This report introduces an approach based on the force curve analysis in terms of the interface characteristics in the M–G–M stack. In the study, the stack was produced by pressing the platinum probe of a scanning probe microscope into the surface of a gold-supported graphene monolayer, and the force curve was measured under applied direct current voltage. Based on the model of the van der Waals contact, the equilibrium interface distances and the built-in potential were obtained from the experimental results. The equilibrium state was proved to be weakly dependent on the applied voltage below a threshold level. Above this level, irreversible changes and the effect of the history of the tests were detected. The proposed method is acceptable to quantitatively describe the most essential characteristics in a local area of the M–G–M stack, essential for the construction of nano-scaled electronic devices.