Abstract
Abstract
Using a convenient and low-cost plasma-enhanced chemical vapor deposition technique, uniform Ga2O3 thin films were hetero-grown on c-plane sapphire substrates at different temperatures, with a root mean square roughness as low as 2.71 nm and a growth rate of up to 1121.30 nm h−1; and then the solar-blind UV photodetection performances were discussed in detail. Metal-semiconductor-metal solar-blind UV photodetectors (PDs) based on the five Ga2O3 films prepared at different temperatures exhibit ultra-low dark currents (I
dark) ranging among 22–168 fA. Under the illumination of 254 nm UV light, the PD prepared by the film grown at 820 °C possesses the highest performance, with a high photo-to-dark current ratio of 1.47 × 105, a low rise/decay time of 0.067/0.13 s, a specific detectivity (D
*) of 3.56 × 1012 Jones, and a linear dynamic range of 92.89 dB. Overall, the results in this work may well provide a referable method for growing cost-effective and ultralow-noise Ga2O3 thin films, as well as achieving decent solar-blind UV sensing applications.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials