Growth and characterization of low composition Ge, x in epi-Si1−x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

Author:

Ajmal Khan MORCID,Sato R,Sawano K,Sichanugrist P,Lukianov A,Ishikawa Y

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analyses of eSiGe Defects Induced by Outdoor Airborne Nanoparticles;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

2. Insight of ZnO/CuO and ZnO/Cu2O solar cells efficiency with SCAPS simulator;Optical and Quantum Electronics;2023-05-14

3. History of c-Si1−Ge solar cells;Silicon-Germanium Alloys for Photovoltaic Applications;2023

4. Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications;Nanowires - Recent Progress;2021-07-14

5. Modelling and numerical analysis of ZnO/CuO/Cu2O heterojunction solar cell using SCAPS;Engineering Research Express;2020-06-04

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