Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors-Reference-Cited by-同舟云学术

Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors

Published:2020-10-23 Issue:2 Volume:54 Page:025109
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Sun Zhonghao^ORCID,Huang Huolin^ORCID,Wang Ronghua,Liu Yanhong^ORCID,Sun Nan,Li Feiyu,Tao Pengcheng,Ren Yongshuo,Song Shukuan,Wang Hongzhou,Li Shaoquan,Cheng Wanxi,Gao Jun,Liang Huinan

Funder

Science and Technology Major Project of Liaoning Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Science and Technology Major Project of Dalian

Open Project Program of Key Lab of Semiconductor Materials Science

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/abbf79/pdf

Reference29 articles.

1. Lateral Charge Distribution and Recovery of Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ in AlGaN/GaN HEMTs

2. High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

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