Abstract
Abstract
Conventional methods using high-purity quartz lenses to control deep-ultraviolet light-emitting diode (DUV-LED) far-field patterns have limitations, including small effective apertures and high cost. We apply phase-type Fresnel zone plates to control the beam angle and enhance light extraction efficiency (LEE) for DUV-LEDs on sapphire and AlN substrates. We demonstrate highly-collimated optics-free DUV-LED emissions with full width at half maximum far-field divergence angles of 40° and 10° on sapphire and AlN substrates at a peak emission wavelength of 279 nm and 273 nm, respectively. LEE enhancements of 1.4 and 1.5 times for DUV-LEDs on sapphire and AlN substrates, respectively, are also achieved.
Funder
Japan Society for the Promotion of Science
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials