Effects of moisture and redox reactions in VCM and ECM resistive switching memories
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aad581/pdf
Reference52 articles.
1. Nanoionics-based resistive switching memories
2. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
3. Low-Temperature Characterization of Cu–Cu:Silica-Based Programmable Metallization Cell
4. Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
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