Abstract
Abstract
The hole collector in silicon heterojunction cells serves not only as an integral component of the p/n junction, determining the strength of the built-in electric field, but also as a layer responsible for hole transport, thereby affecting carrier transport capacity. To enhance carrier extraction and transport properties of the hole collector, various interface treatments have been employed on p-type nanocrystalline (p-nc-Si:H) hole collectors. Through an examination of characteristics such as dark conductivity, crystallinity, and contact resistance, the impact of interface treatment on p-nc-Si:H hole collectors is clarified. Furthermore, considering distinct requirements for the hole collector at different locations, interface treatment processes are optimized accordingly. The introduction of interface treatment on p-nc-Si:H hole collectors has demonstrated significant enhancement of both front and rear junction cell efficiencies, which increased from 17.74% to 21.61% and from 16.83% to 20.92%, respectively.
Funder
Key R&D Program of Hebei Province
Tianjin Science and Technology Project
China Postdoctoral Science Foundation
Natural Science Foundation of Tianjin Municipality
the Joint Funds of the National Natural Science Foundation of China
National Natural Science Foundation of China
National Key Research and Development Program of China
the Overseas Expertise Introduction Project for Discipline Innovation of Higher Education of China
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering