Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates-Reference-Cited by-同舟云学术

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Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

Published:2017-08-16 Issue:36 Volume:28 Page:365704
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Bengoechea-Encabo A,Albert S,Müller M,Xie M–Y,Veit P,Bertram F,Sanchez-Garcia M A,Zúñiga-Pérez J,de Mierry P,Christen J,Calleja E

Funder

H2020 Marie Sklodowska-Curie Actions

Deutsche Forschungsgemeinschaft

Ministerio de Economía y Competitividad

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aa78e6/pdf

Reference44 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

4. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

5. Aligned AlN Nanorods with Multi-tipped Surfaces—Growth, Field-Emission, and Cathodoluminescence Properties

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1. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

2. Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width;Journal of Crystal Growth;2019-11

3. Raman investigation on the surface carrier concentration of single GaN microrod grown by MOCVD;Applied Surface Science;2019-09

4. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes;Materials;2019-08-14

5. Deep UV Emission from Highly Ordered AlGaN/AlN Core–Shell Nanorods;ACS Applied Materials & Interfaces;2018-09-06

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