Abstract
Abstract
Polarized radiative luminous semiconductor chips have huge application potential in many highly value-added fields. The integration of a subwavelength grating is recognized to be the most promising method for the development of polarized chips, but still faces the challenge of low polarized radiative performance. This paper describes a proposal for, and the development of, a scattering-induced enhanced-polarization light-emitting diode chip by directly nanoimprinting a metal-containing nanoparticle-doped grating onto the top surface of a common flip chip. The rate at which quantum-well light emission is used by the developed polarized chip is improved by more than 30%. More attractively, the doped scattering nanoparticles function as a scattering-induced polarization state converter that is sandwiched in between the top aluminum grating and the bottom silver reflector of the chips. The originally non-radiated light, with an electric-field vector parallel to the grating lines, is reflected back and forth inside the sandwich until it changes to the perpendicular vibration mode and is radiated outside the chip. Therefore, the polarization extinction ratio is greatly improved, compared to undoped samples.
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Basic Research Program of Natural Science of Shaanxi Province of China
China Postdoctoral Science Foundation
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
5 articles.
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