Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes-Reference-Cited by-同舟云学术

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Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes

Published:2017-11-09 Issue:48 Volume:28 Page:485205
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Hussain Laiq^ORCID,Karimi Mohammad,Berg Alexander,Jain Vishal,Borgström Magnus T,Gustafsson Anders,Samuelson Lars,Pettersson Håkan

Funder

European Union’s Horizon 2020

Swedish National Board for Industrial and Technological Development

Vetenskapsrådet

NanoLund

Swedish Foundation for Strategic Research and the Swedish Energy Agency

Erik Johan Ljungberg Foundation

Crafoord Foundation and the Carl Trygger Foundation

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aa913c/pdf

Reference39 articles.

1. Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in a Single Alloy Nanowire Using Nanoscale Manipulation

2. Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

3. Room-Temperature Ultraviolet Nanowire Nanolasers

4. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

5. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition;Japanese Journal of Applied Physics;2022-12-30

2. Electrical Properties of the Base‐Substrate Junction in Freestanding Core‐Shell Nanowires;Advanced Materials Interfaces;2022-09-09

3. Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting;ECS Journal of Solid State Science and Technology;2019-11-07

4. Crystal structure and optical properties of GaAs nanowires;Acta Physica Sinica;2019

5. Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires;ACS Applied Materials & Interfaces;2018-09-20

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