A low-cost and high-efficiency method for four-inch silicon nano-mold by proximity UV exposure

Abstract

Abstract Nano-mold is an essential tool for nano-imprinting. However, large-area nano-mold fabrication relies on expensive equipment or complicated processing. Silicon nano-molds were achieved by proximity ultraviolet lithography and reactive ion etching (RIE). By optimizing the parameters in the processes of exposure, development, and RIE, silicon nano-mold with nano-scale ridges were fabricated with high-precision. The achieved minimum width of nano-ridges was 263 nm. This method is capable of fabricating silicon nano-mold covering four-inch wafer, which is simple, efficient and free from costly equipment.