Embedded tin nanocrystals in silicon—an electrical characterization-Reference-Cited by-同舟云学术

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Embedded tin nanocrystals in silicon—an electrical characterization

Published:2018-01-05 Issue:5 Volume:29 Page:055702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Scheffler L^ORCID,Haastrup M J,Roesgaard S^ORCID,Hansen J L,Larsen A Nylandsted,Julsgaard B

Funder

Alexander von Humboldt-Stiftung

Villum Fonden

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aaa066/pdf

Reference42 articles.

1. Band structure and instability of Ge1−xSnx alloys

2. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures

3. Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

4. Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1

5. Growth and structure evaluation of strain-relaxed Ge1−xSnxbuffer layers grown on various types of substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate;Applied Surface Science;2022-08

2. Tin-based donors in SiSn alloys;Journal of Applied Physics;2019-07-21

3. Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography;Materials Research Express;2019-03-06

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