Growth and structure evaluation of strain-relaxed Ge1−xSnxbuffer layers grown on various types of substrates-Reference-Cited by-同舟云学术

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Growth and structure evaluation of strain-relaxed Ge1−xSnxbuffer layers grown on various types of substrates

Published:2006-12-08 Issue:1 Volume:22 Page:S231-S235
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Takeuchi Shotaro,Sakai Akira,Yamamoto Koji,Nakatsuka Osamu,Ogawa Masaki,Zaima Shigeaki

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

2. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

3. Terahertz Optoelectronics

4. Ion velocities in vacuum arc plasmas

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1. Simulation of High-Efficiency Resonant-Cavity-Enhanced GeSn Single-Photon Avalanche Photodiodes for Sensing and Optical Quantum Applications;IEEE Sensors Journal;2021-07-01

2. Formation and optoelectronic property of strain-relaxed Ge1−x−y Si x Sn y /Ge1−x Sn x /Ge1−x−y Si x Sn y double heterostructures on a boron-ion-implanted Ge(001) substrate;Japanese Journal of Applied Physics;2019-07-10

3. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation;Journal of Applied Physics;2019-01-14

4. Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates;Solid State Communications;2018-12

5. Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection;IEEE Photonics Journal;2018-12

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