Author:
Min Jung-Hong,Kwak Hoe-Min,Kim Kiyoung,Jeong Woo-Lim,Lee Dong-Seon
Abstract
Abstract
In this paper, we introduce very thin Indium tin oxide (ITO) layers (5, 10, and
15 nm) hybridized with a metal mesh to produce high-performance transparent
conductive layers (TCLs) in near-ultraviolet light-emitting diodes (NUV LEDs).
Using UV–vis–IR spectrometry, Hall measurement, and atomic force
microscopy, we found that 10 nm was the optimal thickness for the very thin ITO
layers in terms of outstanding transmittance and sheet resistance values as well
as stable contact properties when hybridized with the metal mesh. The proposed
layers showed a value of 4.56 Ω/□ for sheet resistance and a value of
89.1% for transmittance. Moreover, the NUV LEDs fabricated with the
hybrid TCLs achieved ∼140% enhanced light output power compared to
that of 150 nm thick ITO layers. Finally, to verify the practical usage of the
TCLs for industrial applications, we packaged the NUV LED chips and obtained
improved turn-on voltage (3.48 V) and light output power (∼116%)
performance.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献