Abstract
Abstract
In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R
off/R
on ratio of ∼103. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R
off/R
on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Reference42 articles.
1. Future of Non‐Volatile Memory;Ishimaru,2019
2. Recent progress in resistive random access memories: materials, switching mechanisms, and performance;Pan;Mater. Sci. Eng. R: Rep.,2014
3. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications;Zahoor;Nanoscale Res. Lett.,2020
4. Metal–oxide RRAM;Wong;Proc. IEEE,2012
5. Resistive random access memory (ReRAM) based on metal oxides;Akinaga;Proc. IEEE,2010
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